ds30381 rev. 4 - 2 1 of 3 MIMD10A www.diodes.com diodes incorporated epitaxial planar die construction built-in biasing resistors one 500ma pnp and one 100ma npn lead free product characteristic symbol value unit supply voltage v cc -50 v input voltage v in -5 to +5 v output current i o -500 ma features maximum ratings pnp section tr1 @ t a = 25 c unless otherwise specified a m j l d b c h k g f e 1 c 2 b 1 c 1 e 2 b 2 mechanical data case: sot-363, molded plastic case material - ul flammability rating 94v-0 moisture sensitivity: level 1 per j-std-020a terminals: finish - matte tin (note 1) solderable per mil-std-202, method 208 marking code: c73 (see page 2) ordering & date code: see page 2 terminal connections: see diagram weight: 0.015 grams (approx.) t c u d o r p w e n p/n r1 r2 MIMD10A tr1 tr2 0.1k 10k 10k - r 1 r 1 r 2 t r2 t r1 schematic diagram MIMD10A dual pre-biased transistors for power management maximum ratings npn section tr2 @ t a = 25 c unless otherwise specified characteristic symbol value unit collector-base voltage v cbo 50 v collector-emitter voltage v ceo 50 v emitter-base voltage v ebo 5v collector current i c 100 ma maximum ratings - total characteristic symbol value unit power dissipation (note 2) p d 200 mw operating and storage temperature range t j ,t stg -55 to +150 c @ t a = 25 c unless otherwise specified sot-363 dim min max a 0.10 0.30 b 1.15 1.35 c 2.00 2.20 d 0.65 nominal f 0.30 0.40 h 1.80 2.20 j 0.10 k 0.90 1.00 l 0.25 0.40 m 0.10 0.25 0 8 all dimensions in mm note: 1. if lead-bearing terminal plating is required, please contact your diodes inc. sales representative for availabilit y and minimum order details. 2. mounted on fr4 pc board with recommended pad layout at http://www.diodes.com/datasheets/ap02001.pdf.
ds30381 rev. 4 - 2 2 of 3 MIMD10A www.diodes.com characteristic symbol min typ max unit test condition input voltage v l(off) -0.3 v v cc = -5v, i o = -100 a v l(on) -1.5 v o = 0.3, i o = -100ma output voltage v o(on) -0.1 -0.3 v i o = -100ma/-5ma input current i l -25 ma v i = -2v output current i o(off) -0.5 a v cc = -50v, v i = 0v dc current gain g l 68 gain-bandwidth product* f t 200 mhz v ce = -10v, i e = -50ma, f = 100mhz electrical characteristics pnp section tr1 @ t a = 25 c unless otherwise specified t c u d o r p w e n * transistor - for reference only electrical characteristics npn section tr2 @ t a = 25 c unless otherwise specified characteristic symbol min typ max unit test condition collector-base breakdown voltage bv cbo 50 v i c = 50 a collector-emitter breakdown voltage bv ceo 50 v i c = 1ma emitter-base breakdown voltage bv ebo 5 v i e = 50 a collector cutoff current i cbo 0.5 a v cb = 50v emitter cutoff current i ebo 0.5 a v eb = 4v collector-emitter saturation voltage v ce(sat) 0.3 v i c /i b = 10ma / 1.0ma dc current transfer ratio h fe 100 250 600 i c = 1ma, v ce = 5v gain-bandwidth product* f t 250 mhz v ce = 10v, i e = -5ma, f = 100mhz * transistor - for reference only date code key c73 = product type marking code ym = date code marking y = year ex: p = 2003 m = month ex: 9 = september c73 ym marking information device packaging shipping MIMD10A-7 sot-363 3000/tape & reel ordering information (notes 1 and 3) month jan feb march apr may jun jul aug sep oct nov dec code 1234567 89 o nd year 2003 2004 2005 2006 2007 2008 2009 2010 2011 code prstu vw x y notes: 1. if lead-bearing terminal plating is required, please contact your diodes inc. sales representative for availabilit y and minimum order details. 3. for packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
ds30381 rev. 4 - 2 3 of 3 MIMD10A www.diodes.com t c u d o r p w e n 1 1 10 01020304050 i , collector current (ma) c fi g . 6 input volta g e vs. collector current v = 0.2 o v , input voltage (v) in -25c 25c 75 c 0.01 0.1 1 10 100 0 1 234 89 10 i , collector current (ma) c v , input voltage (v) in fi g . 5 collector current vs. input volta g e -25c 5 67 75c 25c 0.001 0 1 2 3 4 0 20 30 c , c apa c itan c e ( pf ) ob v , reverse bias voltage (v) r fig. 4 output capacitance 10 5 15 25 i=0ma e 10 1000 100 1 1 10 100 hfe, dc current gain (normalized) i , collector current (ma) c fi g . 3 dc current gain v = 10 ce 75 c -25 c 25 c 0.001 0.01 0.1 1 0 10 20 30 40 50 v , maximum collector voltage (v) ce(sat) i , collector current (ma) c fig. 2 v vs. i ce ( sat ) c i/i =10 cb -25 c 75 c 25 c -50 0 50 100 150 2 5 0 200 150 50 100 0 t , ambient temperature ( c) a fi g . 1 deratin g curve p , power dissipation (milliwatts) d (total package) typical curves - tr2
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